OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

100 V N-Channel MOSFET

Features • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • VDS • ID=137A • RDS(ON) (at VGS=10V)

OptiMOS?? Power-Transistor

文件：532.15 Kbytes Page：11 Pages

N 沟道功率 MOSFET

OptiMOS?? Power-Transistor

文件：532.15 Kbytes Page：11 Pages

OptiMOS?? Power-Transistor

文件：532.15 Kbytes Page：11 Pages

OptiMOS?? Power-Transistor

文件：532.15 Kbytes Page：11 Pages

MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3

100 V N-Channel MOSFET

• Fast switching speed • Low gate charge, QG=54 nC (typical) • High performance channel technology can achieve very low RDS(on). • High power and high current handling capacity • Meet RoHS standards •VDS=100V •ID(at VGS=10V)=100A •RDS(ON) (at VGS=10V)

OptiMOSTM3 Power-Transistor, 100 V

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor

OptiMOSTM3 Power-Transistor

VDS 100 V RDS(on),max 4.5 mW ID 64 A Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal

N-Channel PowerTrench짰 MOSFET 100 V, 164 A, 4.5 m廓

文件：317.23 Kbytes Page：10 Pages

N-Channel PowerTrench짰 MOSFET 100V, 164A, 4.5m

文件：751.27 Kbytes Page：10 Pages