isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 164A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

丝印代码：045N10A；100 V N-Channel MOSFET

• Fast switching speed • Low gate charge, QG=54 nC (typical) • High performance channel technology can achieve very low RDS(on). • High power and high current handling capacity • Meet RoHS standards •VDS=100V •ID(at VGS=10V)=100A •RDS(ON) (at VGS=10V)

N 沟道，PowerTrench® MOSFET，100V，164A，4.5mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •RDS(on) = 3.8mΩ（典型值）@ VGS = 10V, ID = 100A\n•快速开关速度\n•低栅极电荷 QG = 54nC （典型值）\n•高性能沟道技术可实现极低的 RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET 100V, 164A, 4.5m

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N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

N-Channel PowerTrench짰 MOSFET 100 V, 164 A, 4.5 m廓

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N-Channel PowerTrench짰 MOSFET 100V, 67A, 4.5m

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isc N-Channel MOSFET Transistor

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