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IPD65R660CFD价格
参考价格：￥4.0312
型号：IPD65R660CFD 品牌：Infineon 备注：这里有IPD65R660CFD多少钱，2026年最近7天走势，今日出价，今日竞价，IPD65R660CFD批发/采购报价，IPD65R660CFD行情走势销售排行榜，IPD65R660CFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R660CFD | 650V CoolMOS CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 |   | |
IPD65R660CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | | |
IPD65R660CFD | N-Channel MOSFET Transistor • DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPD65R660CFD | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
650V、N 通道、最大 660 mΩ、汽车 MOSFET、DPAK、CoolMOS ™ CFDA | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.42987 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Superior Avalanche Rugged Technology 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
Superior Avalanche Rugged Technology 文件：188.97 Kbytes Page：7 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | |
IPD65R660CFD产品属性
- 类型
描述
- 型号
IPD65R660CFD
- 功能描述
MOSFET COOLM 650V CFD PWR TRANS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TE/泰科 |
2508+ |
/ |
226570 |
一级代理，原装现货 |
|||
INFINEON/英飞凌 |
2406+ |
TO252 |
11260 |
诚信经营!进口原装!量大价优! |
|||
INFINEON |
23+ |
TO-252 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
INFINEON |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
INFINEON |
23+ |
TO-252 |
20000 |
||||
INFINEON/英飞凌 |
25+ |
TO-252 |
18300 |
全新原装正品支持含税 |
|||
INFINEON |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
Infineon(英飞凌) |
25+ |
TO-252 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
英飞凌 |
24+/25+ |
SOT-252 |
5000 |
原装正品现货库存价优 |
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IPD65R660CFD规格书下载地址
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DdatasheetPDF页码索引
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