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IPD65R660CFD价格
参考价格:¥4.0312
型号:IPD65R660CFD 品牌:Infineon 备注:这里有IPD65R660CFD多少钱,2025年最近7天走势,今日出价,今日竞价,IPD65R660CFD批发/采购报价,IPD65R660CFD行情走势销售排行榜,IPD65R660CFD报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
IPD65R660CFD | 650V CoolMOS CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | ||
IPD65R660CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | ||
IPD65R660CFD | N-Channel MOSFET Transistor • DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | ||
IPD65R660CFD | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | ||
650V、N 通道、最大 660 mΩ、汽车 MOSFET、DPAK、CoolMOS ™ CFDA | Infineon 英飞凌 | |||
Metal Oxide Semiconductor Field Effect Transistor 文件:1.42987 Mbytes Page:14 Pages | Infineon 英飞凌 | |||
N-Channel MOSFET Transistor • DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |||
Superior Avalanche Rugged Technology 文件:285.62 Kbytes Page:8 Pages | SEMIHOW | |||
650V N-Channel Super Junction MOSFET 文件:285.62 Kbytes Page:8 Pages | SEMIHOW | |||
Superior Avalanche Rugged Technology 文件:188.97 Kbytes Page:7 Pages | SEMIHOW | |||
650V N-Channel Super Junction MOSFET 文件:285.62 Kbytes Page:8 Pages | SEMIHOW |
IPD65R660CFD产品属性
- 类型
描述
- 型号
IPD65R660CFD
- 功能描述
MOSFET COOLM 650V CFD PWR TRANS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
372 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
7577 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
原装 |
32360 |
INFINEON/英飞凌全新特价IPD65R660CFDAATMA1即刻询购立享优惠#长期有货 |
|||
INFINEON |
1142+ |
TO252 |
6610 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
13800 |
原装正品支持实单 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINE0N |
21+ |
PG-TO252-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
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IPD65R660CFD规格书下载地址
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2019-5-6
DdatasheetPDF页码索引
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