IPD65R660CFD价格

参考价格:¥4.0312

型号:IPD65R660CFD 品牌:Infineon 备注:这里有IPD65R660CFD多少钱,2025年最近7天走势,今日出价,今日竞价,IPD65R660CFD批发/采购报价,IPD65R660CFD行情走势销售排行榜,IPD65R660CFD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPD65R660CFD

650V CoolMOS CFD Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

Infineon

英飞凌

IPD65R660CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

Infineon

英飞凌

IPD65R660CFD

N-Channel MOSFET Transistor

• DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPD65R660CFD

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

650V、N 通道、最大 660 mΩ、汽车 MOSFET、DPAK、CoolMOS ™ CFDA

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.42987 Mbytes Page:14 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Superior Avalanche Rugged Technology

文件:285.62 Kbytes Page:8 Pages

SEMIHOW

650V N-Channel Super Junction MOSFET

文件:285.62 Kbytes Page:8 Pages

SEMIHOW

Superior Avalanche Rugged Technology

文件:188.97 Kbytes Page:7 Pages

SEMIHOW

650V N-Channel Super Junction MOSFET

文件:285.62 Kbytes Page:8 Pages

SEMIHOW

IPD65R660CFD产品属性

  • 类型

    描述

  • 型号

    IPD65R660CFD

  • 功能描述

    MOSFET COOLM 650V CFD PWR TRANS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
372
优势代理渠道,原装正品,可全系列订货开增值税票
Infineon(英飞凌)
24+
标准封装
7577
原厂渠道供应,大量现货,原型号开票。
INFINEON/英飞凌
22+
SOT-252
100000
代理渠道/只做原装/可含税
INFINEON/英飞凌
25+
原装
32360
INFINEON/英飞凌全新特价IPD65R660CFDAATMA1即刻询购立享优惠#长期有货
INFINEON
1142+
TO252
6610
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON/英飞凌
22+
TO-252
13800
原装正品支持实单
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
INFINE0N
21+
PG-TO252-3
32568
100%进口原装!长期供应!绝对优势价格(诚信经营

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