Metal Oxide Semiconductor Field Effect Transistor

文件：1.31097 Mbytes Page：14 Pages

20V-650V汽车级MOSFET

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.42Ω ·Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variation

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤420mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

650V CoolMOS C6 CFD Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

11A竊?50V N-CHANNEL MOSFET

文件：461.65 Kbytes Page：6 Pages