| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R420CFDA | 650V、N 沟道、最大 420 mΩ、汽车 MOSFET、DPAK、CoolMOS ™ CFDA 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ; | INFINEON 英飞凌 |   | |
IPD65R420CFDA | Metal Oxide Semiconductor Field Effect Transistor 文件：1.31097 Mbytes Page：14 Pages | INFINEON 英飞凌 | | |
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | INFINEON 英飞凌 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | INFINEON 英飞凌 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | INFINEON 英飞凌 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | INFINEON 英飞凌 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | INFINEON 英飞凌 | |
IPD65R420CFDA产品属性
- 类型
描述
- OPN：
IPD65R420CFDAATMA1
- Qualification：
Automotive
- Package name：
PG-TO252-3
- VDS max：
650 V
- RDS (on) @10V max：
420 mΩ
- ID @25°C max：
8.7 A
- QG typ @10V：
32 nC
- Special Features：
automotive
- Polarity：
N
- VGS(th) min：
3.5 V
- VGS(th) max：
4.5 V
- Technology：
CoolMOS™ CFDA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
25+23+ |
TO-252 |
27012 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
23+ |
TO252 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
Infineon |
25+ |
PG-TO252-3 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
8000 |
专注配单,只做原装进口现货 |
|||
Infineon(英飞凌) |
2447 |
PG-TO252-3 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
INFINEON/英飞凌 |
21+ |
NA |
2500 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
INF |
23+ |
TO-252 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
26+ |
TO-252 |
5000 |
十年沉淀唯有原装 |
IPD65R420CFDA芯片相关品牌
IPD65R420CFDA规格书下载地址
IPD65R420CFDA参数引脚图相关
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2019-5-6
DdatasheetPDF页码索引
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