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IPB65R420CFD价格
参考价格：￥5.5974
型号：IPB65R420CFD 品牌：Infineon Technologies 备注：这里有IPB65R420CFD多少钱，2025年最近7天走势，今日出价，今日竞价，IPB65R420CFD批发/采购报价，IPB65R420CFD行情走势销售排行榜，IPB65R420CFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB65R420CFD | 650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 |   | |
IPB65R420CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | |
IPB65R420CFD | Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | |
IPB65R420CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.42Ω ·Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤420mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
11A竊?50V N-CHANNEL MOSFET 文件：461.65 Kbytes Page：6 Pages | KIA 可易亚半导体 | |
IPB65R420CFD产品属性
- 类型
描述
- 型号
IPB65R420CFD
- 功能描述
MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
23+ |
D2PAK(TO |
30000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon(英飞凌) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
23+ |
PG-TO263 |
8000 |
只做原装现货 |
|||
INFINEON |
23+ |
PG-TO263 |
7000 |
||||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
中性 |
23+ |
SOT-23 |
69820 |
终端可以免费供样,支持BOM配单! |
IPB65R420CFD规格书下载地址
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DdatasheetPDF页码索引
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