位置：首页 > IC中文资料第11557页 > IPI65R420CFD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI65R420CFD | 650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 |   | |
IPI65R420CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | |
IPI65R420CFD | isc N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.42Ω ·Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variation | ISC 无锡固电 | | |
IPI65R420CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.42Ω ·Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤420mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
11A竊?50V N-CHANNEL MOSFET 文件：461.65 Kbytes Page：6 Pages | KIA 可易亚半导体 | |
IPI65R420CFD产品属性
- 类型
描述
- 型号
IPI65R420CFD
- 功能描述
MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
23+ |
TO-262 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
INFINEON/英飞凌 |
25+ |
HALOGENFREE |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
23+ |
TO-262 |
8000 |
专注配单,只做原装进口现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
Infineon(英飞凌) |
24+ |
TO-262 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INfineon |
23+24 |
TO-262 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
INFINEON |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
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2018-12-30
DdatasheetPDF页码索引
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