isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

OptiMOS®-T2 Power-Transistor

Features • OptiMOSTM - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

OptiMOS3 Power-Transistor

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OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

OptiMOS-T2 Power-Transistor

文件：160.1 Kbytes Page：9 Pages

40 V、N 沟道、最大 1.9 mΩ、汽车 MOSFET、DPAK、OptiMOS ™ -T2

60 V、N 沟道、最大 3.5 mΩ、汽车 MOSFET、DPAK、OptiMOS ™ -T2

OptiMOS-T2 Power-Transistor

文件：168.75 Kbytes Page：9 Pages

OptMOS™ 3 Power-Transistor

OptiMOS3 Power-Transistor

文件：236.24 Kbytes Page：9 Pages