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IPB65R110CFD价格
参考价格：￥18.8656
型号：IPB65R110CFD 品牌：Infineon 备注：这里有IPB65R110CFD多少钱，2024年最近7天走势，今日出价，今日竞价，IPB65R110CFD批发/采购报价，IPB65R110CFD行情走势销售排行榜，IPB65R110CFD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB65R110CFD | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPB65R110CFD | iscN-ChannelMOSFETTransistor •FEATURES •WithTO-263(D2PAK)packaging •Ultra-fastbodydiode •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650VCoolMOS짧CFD7SJPowerDevice 文件：1.28016 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.11Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •SuitableforresonantSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤110mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IPB65R110CFD产品属性
- 类型
描述
- 型号
IPB65R110CFD
- 功能描述
MOSFET N-Channel MOSFET 650V 110 mOhm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263 |
8800 |
公司只作原装正品 |
|||
INFINEON/英飞凌 |
21+ |
TO-263-3 |
2000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
INFINEON/英飞凌 |
21+23+ |
TO-263 |
5608 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
INFINEON/英飞凌 |
19+ |
TO-263 |
4800 |
只做原装只有原装可开增值税票 |
|||
INFINEON/英飞凌 |
2021+ |
TO-263 |
18111 |
原装进口假一罚十 |
|||
INFINEON/英飞凌 |
2048+ |
TO263 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
INFINEON |
22+ |
TO263 |
1125 |
只做原装正品现货,假一赔十 |
|||
INFINOEN |
23+ |
TO-263 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
5623 |
只做原装正品现货!或订货假一赔十! |
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