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IPB65R110CFDA价格
参考价格：￥24.6673
型号：IPB65R110CFDAATMA1 品牌：Infineon 备注：这里有IPB65R110CFDA多少钱，2026年最近7天走势，今日出价，今日竞价，IPB65R110CFDA批发/采购报价，IPB65R110CFDA行情走势销售排行榜，IPB65R110CFDA报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB65R110CFDA | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 |   | |
IPB65R110CFDA | 20V-650V汽车级MOSFET | Infineon 英飞凌 | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.11Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Suitable for resonant Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤110mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | |
IPB65R110CFDA产品属性
- 类型
描述
- 型号
IPB65R110CFDA
- 制造商
Infineon Technologies AG
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
N/A |
10000 |
正规渠道,只有原装! |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
D2PAK(TO-263) |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
Infineon(英飞凌) |
2447 |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
INFINEON/英飞凌 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
2000 |
原装现货 价格优势 |
|||
INFINEON/英飞凌 |
20+ |
PG-TO263-3 |
4888 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
24+ |
PG-TO263-3 |
6229 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
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IPB65R110CFDA规格书下载地址
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DdatasheetPDF页码索引
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