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IPB65R110CFD中文资料
IPB65R110CFD数据手册规格书PDF详情
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
• Pb-free plating, Halogen free mold compound
Applications
650V CoolMOS CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCT TV, Lighting, Server, Telecom and Solar.
IPB65R110CFD产品属性
- 类型
描述
- 型号
IPB65R110CFD
- 功能描述
MOSFET N-Channel MOSFET 650V 110 mOhm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
N/A |
10000 |
正规渠道,只有原装! |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
29048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
|||
INFINEON/英飞凌 |
24+ |
D2PAK(TO-263) |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
INFINEON |
22+ |
NA |
6520 |
原盘原标 公司现货/支持实单 |
|||
INFINEON |
23+ |
TO-263 |
20000 |
进口原装现货 |
|||
INFINEON |
24+ |
TO263 |
1125 |
只做原装正品现货,假一赔十 |
|||
INFINEON |
2024+ |
TO-263 |
15000 |
绝对全新原装,现货热卖 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON |
20+ |
TO-263 |
4000 |
全新原装公司现货
|
IPB65R110CFDAATMA1 价格
参考价格：￥24.6673
IPB65R110CFD 资料下载更多...
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INFINEON相关芯片制造商
Datasheet数据表PDF页码索引
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