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IPA65R660CFD价格
参考价格：￥5.7781
型号：IPA65R660CFD 品牌：INF 备注：这里有IPA65R660CFD多少钱，2025年最近7天走势，今日出价，今日竞价，IPA65R660CFD批发/采购报价，IPA65R660CFD行情走势销售排行榜，IPA65R660CFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPA65R660CFD | 650V CoolMOS CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 |   | |
IPA65R660CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | | |
IPA65R660CFD | Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.66Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicati | ISC 无锡固电 | | |
IPA65R660CFD | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Superior Avalanche Rugged Technology 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
Superior Avalanche Rugged Technology 文件：188.97 Kbytes Page：7 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | |
IPA65R660CFD产品属性
- 类型
描述
- 型号
IPA65R660CFD
- 功能描述
MOSFET N-CH 650V 6.0A TO220
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
CoolMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
20+ |
TO-220FullPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
18+ |
TO-220F |
116 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
20+ |
TO-220 |
20000 |
全新原装公司现货
|
|||
INFINOEN |
24+ |
TO-220-3 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
10000 |
专营IR 英飞凌 支持含税 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
INFINEON |
25+23+ |
TO-220 |
28532 |
绝对原装正品全新进口深圳现货 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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2019-3-8
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