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IKD06N60RF价格
参考价格：￥3.5846
型号：IKD06N60RF 品牌：Infineon 备注：这里有IKD06N60RF多少钱，2025年最近7天走势，今日出价，今日竞价，IKD06N60RF批发/采购报价，IKD06N60RF行情走势销售排行榜，IKD06N60RF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IKD06N60RF | ?쏳C-D Fast?? RC-Drives IGBT optimized for high switching frequency 文件：886.12 Kbytes Page：16 Pages | Infineon 英飞凌 |   | |
IKD06N60RF | RC-Drive and RC-Drive Fast 文件：368.29 Kbytes Page：2 Pages | Infineon 英飞凌 | | |
IKD06N60RF | IGBT with integrated diode in packages offering space saving advantage 文件：1.9381 Mbytes Page：16 Pages | Infineon 英飞凌 | | |
IGBT with integrated diode in packages offering space saving advantage 文件：1.9381 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
Optimized Eon, Eoff and Qrr for low switching losses 文件：1.96668 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica | Fuji 富士电机 | | ||
Power filed Effect Transistor FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature | JIANGSU 长电科技 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.92413 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.74081 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IKD06N60RF产品属性
- 类型
描述
- 型号
IKD06N60RF
- 制造商
Infineon Technologies AG
- 功能描述
Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252
- 制造商
Infineon Technologies AG
- 功能描述
IGBT PRODUCTS - Tape and Reel
- 制造商
Infineon Technologies AG
- 功能描述
IGBT 600V 12A 100W PG-TO252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
INFINEON/英飞凌 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON |
24+ |
TO252 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
1706+ |
TO-252 |
2380 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
25+ |
TO-252 |
6000 |
全新原装现货、诚信经营! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
INFINEON/英飞凌 |
25+ |
TO-252 |
32360 |
INFINEON/英飞凌全新特价IKD06N60RF即刻询购立享优惠#长期有货 |
|||
Infineon/英飞凌 |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
|||
INFINEON |
22+ |
TO-252 |
25000 |
原装正品，实单请联系 |
IKD06N60RF规格书下载地址
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类别：分离式半导体产品家庭：IGBT - 单路系列：TrenchStop?IGBT 类型：沟道电压 - 集电极发射极击穿（最大）：600VVge， Ic时的最大Vce（开）：2.1V @ 15V，6A电流 - 集电极 (Ic)（最大）：12A功率 - 最大：100W输入类型：标准型安装类型：表面贴装封装/外壳：TO-252-3，DPak（2 引线+接片），SC-63供应商设备封装：PG-TO
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DdatasheetPDF页码索引
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