IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=1.7V@IC=50A ·High Speed Smooth Switching Device For Hard & Soft Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

High speed switching series fifth generation

文件：1.37058 Mbytes Page：14 Pages

High speed switching series fifth generation

文件：1.35654 Mbytes Page：14 Pages

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Current Capability · High Input Impedance APPLICATIONS · Solar Converters · Uninterrupted Power Supply · UPS,PFC · Welding Converters

Trench and Field Stop IGBT 650V 50A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

650V /50A Trench Field Stop IGBT

文件：1.24913 Mbytes Page：8 Pages