IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Current Capability · High Input Impedance APPLICATIONS · Solar Converters · Uninterrupted Power Supply · UPS,PFC · Welding Converters

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=1.7V@IC=50A ·High Speed Smooth Switching Device For Hard & Soft Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

Trench and Field Stop IGBT 650V 50A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

650V /50A Trench Field Stop IGBT

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