General Information

The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate

and a bipolar transistor for an optimum component for high voltage and high current

applications. This device uses Trench-Gate Field-Stop technology providing greater

control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage

(VCE(sat)) and fewer switching losses. In addition, this structure provides a lower

thermal resistance R(th).

Features

650 V, 50 A, Low Collector-Emitter

Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

RoHS compliant*

Applications

Switch-Mode Power Supplies (SMPS)

Uninterruptible Power Sources (UPS)

Power Factor Correction (PFC)

Inverters