Trench and Field Stop IGBT 650V 50A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

IGBT Discrete

Trench and Field Stop IGBT 650V 50A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 40A TO-247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Current Capability · High Input Impedance APPLICATIONS · Solar Converters · Uninterrupted Power Supply · UPS,PFC · Welding Converters

650V/50A Trench Field Stop IGBT

Features  650V 50A,VCE(sat)(typ.) = 1.70 V@50A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Motor Control.  Rugged Performance.  Excellent Current Sharing in Parallel Operation

650V/50A Trench Field Stop IGBT

Features  650V 50A,VCE(sat)(typ.) = 2.30 V@50A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Motor Control.  Rugged Performance.  Excellent Current Sharing in Parallel Operation

650V /50A Trench Field Stop IGBT

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