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位置：首页 > IC中文资料第8224页 > IDT71V416S

型号 功能描述 生产厂家&企业 LOGO 操作
IDT71V416S

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

文件：107.36 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)Single3.3Vpowersupply

文件：109.84 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S

3.3VCMOSStaticRAM

文件：645.53 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12Y

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15Y

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S20Y

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S_13

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)Single3.3Vpowersupply

文件：109.84 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S_16

3.3VCMOSStaticRAM

文件：645.53 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10BEI8

封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 4MBIT PARALLEL 48CABGA 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
IDT71V416S10PH

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
IDT71V416S15PHI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

文件：107.36 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)Single3.3Vpowersupply

文件：109.84 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

文件：107.36 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V416S产品属性

  • 类型

    描述

  • 型号

    IDT71V416S

  • 功能描述

    IC SRAM 4MBIT 10NS 48FBGA

  • RoHS

    否

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    72

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步

  • 存储容量

    4.5M（256K x 18）

  • 速度

    133MHz

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP（14x20）

  • 包装

    托盘

IDT71V416S供应商更多...

更新时间：2024-5-24 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市福田区亿兴成电子商行
IDT71V416S15PHGI
IT
TSOP
6688
1412
现货库存
询价
深圳市天成基业科技有限公司
IDT71V416S20Y
IDT
20+/21+
PGA
5600
全新原装进口价格优惠
询价
深圳市安富世纪电子有限公司
IDT71V416S15PHGI8
IDT
21+
TSSOP
50000
全新原装正品现货,支持订货
询价
深圳市明嘉莱科技有限公司
IDT71V416S12PH
IDT
00+
TSOP44
880000
明嘉莱只做原装正品现货
询价
深圳市华来深电子有限公司
IDT71V416S12PH
n/a
23+
na
8560
原包装原标签特价销售
询价
标准国际(香港)有限公司
IDT71V416S10PHG
IDT
10
全新原装!优势库存热卖中!
询价
深圳市勤思达科技有限公司
IDT71V416S15PH
IDT
23+
TSOP
5500
原装无铅,优势热卖
询价
深圳市华睿芯科技有限公司
IDT71V416S15YG
IDT
23+
SOJ-44
20000
原厂原装正品现货
询价
深圳市凌旭科技有限公司
IDT71V416S12PHG
IDT
21+
TSOP44
1709
询价
深圳中芯器材有限公司
IDT71V416SI12YG
idt
dc12
原厂封装
118
INSTOCK:16/tube/soj
询价

IDT71V416S芯片相关品牌

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  • YAMAICHI

IDT71V416S规格书下载地址

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