位置:IDT71V416S12BEG > IDT71V416S12BEG详情

IDT71V416S12BEG中文资料

厂家型号

IDT71V416S12BEG

文件大小

90.4Kbytes

页面数量

9

功能描述

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

IC SRAM 4MBIT 12NS 48FBGA

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IDT

IDT71V416S12BEG数据手册规格书PDF详情

Description

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.

The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Features

◆ 256K x 16 advanced high-speed CMOS Static RAM

◆ JEDEC Center Power / GND pinout for reduced noise.

◆ Equal access and cycle times

– Commercial and Industrial: 10/12/15ns

◆ One Chip Select plus one Output Enable pin

◆ Bidirectional data inputs and outputs directly LVTTL-compatible

◆ Low power consumption via chip deselect

◆ Upper and Lower Byte Enable Pins

◆ Single 3.3V power supply

◆ Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

IDT71V416S12BEG产品属性

  • 类型

    描述

  • 型号

    IDT71V416S12BEG

  • 功能描述

    IC SRAM 4MBIT 12NS 48FBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    72

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步

  • 存储容量

    4.5M(256K x 18)

  • 速度

    133MHz

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP(14x20)

  • 包装

    托盘

更新时间:2025-11-26 17:21:00
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