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位置：首页 > IC中文资料第1494页 > IDT71V416

型号 功能描述 生产厂家&企业 LOGO 操作
IDT71V416

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L10BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L10BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L10PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L10PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L10YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L10YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L12BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L12BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L12PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L12PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L12YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L12YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L15BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L15BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L15PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L15PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L15YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416L15YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S10YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12Y

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S12YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15Y

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S15YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416S20Y

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL10BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL10BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL10PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL10PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL10YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL10YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL12BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL12BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL12PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL12PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL12YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL12YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL15BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL15BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL15PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL15PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V416VL15YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V416产品属性

  • 类型

    描述

  • 型号

    IDT71V416

  • 功能描述

    IC SRAM 4MBIT 10NS 48FBGA

  • RoHS

    否

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    72

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步

  • 存储容量

    4.5M（256K x 18）

  • 速度

    133MHz

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP（14x20）

  • 包装

    托盘

IDT71V416供应商更多...

更新时间：2024-5-15 9:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市英卓尔科技有限公司
IDT71V416
IDT
20+
SMD
200
英卓尔科技,进口原装现货!
询价
深圳市智芯远电子有限公司
IDT71V416L10PHG8
IDT
22+
TSOP
58560
代理品牌,原装现货,假一罚十
询价
深圳市智连鑫科技有限公司
IDT71V416S10PH
IDT
23+
SSOP
8000
原装现货
询价
深圳市振鑫微电子科技有限公司
IDT71V416S15PHGI
IDT
23+
TSOP
50000
全新原装现货热卖
询价
深圳市锐视安科技有限公司
IDT71V416
IDT
99/00
TSOP44
609
特价销售欢迎来电!!
询价
深圳市振芯物联科技有限公司
IDT71V416
IDT
22+
TSOP
32350
原装正品 假一罚十 公司现货
询价
深圳市勤思达科技有限公司
IDT71V416L10PHG
ADI/亚德诺
2021+
SOT143
9000
全新原装正品 现货供应
询价
深圳市坤融电子科技有限公司
IDT71V416S15Y
IDT
2022+
SOJ
4000
原装原厂代理 可免费送样品
询价
深圳市永贝尔科技有限公司
IDT71V416
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
深圳市昌和盛利电子有限公司
IDT71V416L10BE
IDT原装正品专卖价格
23+
48FPBGA
9526
专注原装正品现货特价中量大可定
询价

IDT71V416芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

IDT71V416规格书下载地址

IDT71V416参数引脚图相关

IDT71V416数据表相关新闻

DdatasheetPDF页码索引

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