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高功率元器件  硅可控整流器 扁平型

高功率元器件由螺柱型、扁平型二极管及晶闸管构成,是可支持高压和大电流的产品。尤其是应用在对可靠性和品质有严格要求的发电站、铁路、船舶和大型电源等方面。

KSS

京瓷

桌机/服务器电源专用 Housekeeping 系列

INFSitronix

SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION

WINBOND

华邦电子

SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION

文件:709.95 Kbytes Page:26 Pages

WINBOND

华邦电子

SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION

文件:709.95 Kbytes Page:26 Pages

WINBOND

华邦电子

SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION

文件:709.95 Kbytes Page:26 Pages

WINBOND

华邦电子

PRODUCT SPECIFICATION FOR TFT LLCM

文件:724.27 Kbytes Page:13 Pages

ILLUMINANTILLUMINANT CO., LTD

北極光北极光企业有限公司

PRODUCT SPECIFICATION FOR TFT LCM

文件:376.11 Kbytes Page:13 Pages

ILLUMINANTILLUMINANT CO., LTD

北極光北极光企业有限公司

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

MOTOROLA

摩托罗拉

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

NTE

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

I180产品属性

  • 类型

    描述

  • VRMM VDRM [V]:

    1600V

  • VDSM [V]:

    1600V

  • VRSM [V]:

    1700V

  • IT(RMS) [A]:

    2356A

  • Io [A]:

    1500.0A

  • ITSM [A]:

    13500A

  • I2t [A2s]:

    9.11 × 105A2s

  • IDM IRM [mA]:

    100mA

  • VTM [V]:

    2.49V

  • dv/dt [V/µs]:

    1000V/µs

  • di/dt [A/µs]:

    200A/µs

  • VGT [V]:

    3.0V

  • 工作温度范围:

    -40℃ ~ 125℃

  • Rth(j-c) [°C/W]:

    0.018°C/W

  • Mounting Force[kN] ※:

    20 (18)kN

  • 质量:

    180.000g

更新时间:2026-5-23 17:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TRAK
25+23+
17525
绝对原装正品全新进口深圳现货
WINBOND
22+
DIE
8000
原装正品支持实单
TRAK
17+
NA
6200
100%原装正品现货
N/A
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TRAK
最新
6900
只做进口原装品质决定一切价格优惠
INTERSI
23+
QFP48
56562
##公司主营品牌长期供应100%原装现货可含税提供技术
MMD
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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