Medium Power Linear and Switching Applications

Applications • Complement to BD 175/177/179 respectively

Plastic Medium Power Silicon PNP Transistor

3.0 AMPERES POWER TRANSISTORS PNP SILICON 80 VOLTS, 30 WATTS This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features •DC Current Gain − hFE= 40 (Min) @ IC= 0.15 Adc •BD180 is complementary wi

EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

Silicon PNP Power Transistors

DESCRIPTION With TO-126 package ·Complement to type BD175 /177 /179 APPLICATIONS ·For medium power linear and switching applications

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

1.0 A，80 V PNP 双极功率晶体管

The 3 A, 80 V PNP Bipolar Power Transistor is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain -hFE = 40 (Min) @ IC = 0.15 Adc\n• BD180 is complementary with BD179\n• Pb-Free Package is Available;

Single Bipolar Transistor

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Silicon NPN Power Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS PNP 80V 3A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Ultra Low Profile 1336 Balun 50廓 to 100廓 Balanced

Features: ● 1700~1900 MHz ● 0.85mm Height Profile ● 50Ohm to 2x50 Ohm ● High CMRR ● Low Insertion Loss ● Input to Output DC Isolation ● Surface Mountable ● Tape & Reel ● Non-conductive Surface ● RoHS Compliant Applications ● WiMAX ● GPS ● UWB ● Bluetooth ● Zigbee ● GSM

Ultra Low Profile 1335 Balun 50廓 to 200廓 Balanced

Features: ● 1600~1900 MHz ● 0.85mm Height Profile ● 50Ohm to 2x100 Ohm ● High CMRR ● Low Insertion Loss ● Input to Output DC Isolation ● Surface Mountable ● Tape & Reel ● Non-conductive Surface ● RoHS Compliant Applications ● WiMAX ● GPS ● UWB ● Bluetooth ● Zigbee ● GSM

Plastic Medium Power Silicon PNP Transistor

3.0 AMPERES POWER TRANSISTORS PNP SILICON 80 VOLTS, 30 WATTS This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features •DC Current Gain − hFE= 40 (Min) @ IC= 0.15 Adc •BD180 is complementary wi

EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 80V 1A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und