Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

Complementary Transistors

Integrated Circuit TV Multiplex Sound Decoder

Description: The NTE1800 Multiplexed Sound Decoder is a linear integrated circuit in a 30–Lead DIP type package that incorporates the SAP demodulation and the L, R matrix circuits required to demodulate multiplexed sound signals on the US NTSC system. The NTE1800 also features mode switching

Integrated Circuit TV dbx Noise Reduction System

Description: The NTE1801 Multiplexed Sound dbx Noise Reduction Decoder is a single–chip linear IC in a 28–Lead DIP type package suitable for US NTSC System use. The device incorporates two RMS–level sensors and VCA circuits, as well as five operational amplifiers and two buffer circuits. A c

Integrated Circuit Power Amplifier for Car Stereo Radio, 12W/Ch or 24W BTL

Description: The NTE1802 is an integrated class–B output amplifier in a 13–Lead SIP type package. This device contains two identical amplifiers with different input stages which can be used for stereo or bridge applications. The gain of each amplifier is fixed at 20dB. A special feature of the

Integrated Circuit Power Amplifier for Car Stereo Radio, 12W/Ch or 24W BTL

Description:\nThe NTE1802 is an integrated class–B output amplifier in a 13–Lead SIP type package. This device contains two identical amplifiers with different input stages which can be used for stereo or bridge applications. The gain of each amplifier is fixed at 20dB. A special feature of the NTE1

Integrated Circuit Stereo Audio Control

Description: The NTE1803 is an linear integrated circuit in a 18–Lead DIP type package designed as an active stereo tone/volume control for car radios, TV receivers, and audio equipment. It includes functions for bass and treble control, volume control with built–in contour (can be switched off

Integrated Circuit Vertical Deflection Circuit for Large Screen TV

Description: The NTE1804 is an integrated circuit in a 13–Lead SIP type package designed for vertical deflection in video monitors and large screen color television receivers, e.g. 30AX and PIL–S4 systems. Features: Oscillator; Switch Capability for 50Hz/60Hz Operation Synchronizatio

Integrated Circuit Vertical Deflection Circuit for Large Screen TV

Description:\nThe NTE1804 is an integrated circuit in a 13–Lead SIP type package designed for vertical deflection in video monitors and large screen color television receivers, e.g. 30AX and PIL–S4 systems.Features:\nOscillator; Switch Capability for 50Hz/60Hz Operation\nSynchronization Circuit\nBla

Integrated Circuit Recording Video Signal Processing Circuit

Description: The NTE1805 is an integrated circuit in a 28–Lead DIP type package designed for use in VCR recording video signal processing. Features: • Dynamic Emphasis Characteristics: 5.5dB (at f = 1MHz, input level = –20dB) • Built–In Carrier Interleaving Circuit • Built–In Low

Integrated Circuit Head Amplifier Circuit for 4 Head VCR

Features: • Built–in Enveloped Comparing Circuit • Built–in Peaking Amplifier Circuit • Less Noise Voltage Referred to Input: 1µVrms

Integrated Circuit Head Amplifier Circuit for 2 Head VCR

Features: • Built–in Peaking Amplifier Circuit • Less Noise Voltage Referred to Input: 1µVrms

Integrated Circuit Playback Video Processor for VCR

Description: The NTE1808 is a integrated circuit in a 28–Lead DIP type package designed for VCR playback video signal processin circuits. Features: • Built–In Line Noise Canceler • Built–In Picture Control Circuit • Supply Voltage: VCC = 5V

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

LA7760