位置：首页 > IC中文资料第10793页 > HY57V561620BT-SI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620BT-SI | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620BT-SI产品属性
- 类型
描述
- 型号
HY57V561620BT-SI
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
22+ |
MICREL/麦瑞 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
HY |
21+ |
TSSOP56 |
10000 |
原装现货假一罚十 |
|||
HY |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
HYNIX |
6200 |
TSOP |
17 |
100%原装正品现货 |
|||
HYNIX/海力士 |
24+ |
TSOP |
20000 |
不忘初芯-只做原装正品 |
|||
HUNIX |
18+ |
SSOP |
85600 |
保证进口原装可开17%增值税发票 |
|||
HY |
25+ |
TSOP54 |
133 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HYX |
24+ |
TSOP |
26880 |
原装现货假一罚十 |
|||
HY |
24+ |
NA/ |
3304 |
原装现货,当天可交货,原型号开票 |
|||
TI |
23+ |
SOP |
6500 |
全新原装假一赔十 |
HY57V561620BT-SI芯片相关品牌
HY57V561620BT-SI规格书下载地址
HY57V561620BT-SI参数引脚图相关
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HY57V561620BT-SI数据表相关新闻
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2019-2-25
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