位置：首页 > IC中文资料第10793页 > HY57V561620BT-SI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620BT-SI | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | |
HY57V561620BT-SI产品属性
- 类型
描述
- 型号
HY57V561620BT-SI
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
hy |
26+ |
tssop |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
HY |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
HYUNDAI |
24+ |
TSOP |
8 |
||||
HYNIX |
6200 |
TSOP |
17 |
100%原装正品现货 |
|||
HYNIX |
26+ |
QFN48 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
hy |
23+ |
tssop |
5000 |
原装正品,假一罚十 |
|||
HYNIX |
25+ |
TSOP54 |
15 |
主营内存芯片 全新原装正品 |
|||
HUNIX |
18+ |
SSOP |
85600 |
保证进口原装可开17%增值税发票 |
|||
HY |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
HY57V561620BT-SI芯片相关品牌
HY57V561620BT-SI规格书下载地址
HY57V561620BT-SI参数引脚图相关
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HY57V561620BT-SI数据表相关新闻
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2019-2-25
DdatasheetPDF页码索引
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