位置：首页 > IC中文资料第10793页 > HY57V561620BT-SI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620BT-SI | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HynixHynix Semiconductor 海力士海力士半导体 |  |   |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | HynixHynix Semiconductor 海力士海力士半导体 | | | |
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HynixHynix Semiconductor 海力士海力士半导体 | | | |
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HynixHynix Semiconductor 海力士海力士半导体 | | | |
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HynixHynix Semiconductor 海力士海力士半导体 | | | |
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HynixHynix Semiconductor 海力士海力士半导体 | | |
HY57V561620BT-SI产品属性
- 类型
描述
- 型号
HY57V561620BT-SI
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
6200 |
TSOP |
17 |
100%原装正品现货 |
|||
HY |
2020+ |
TSOP54 |
133 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HYNIX |
23+ |
TSOP |
3925 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
HYNIX |
新年份 |
TSOP-54 |
3500 |
绝对全新原装现货,欢迎来电查询 |
|||
TSOP54 |
21+ |
HY |
12588 |
原装正品,自己库存 假一罚十 |
|||
HY |
TSOP |
4311 |
优势库存 |
||||
hy |
23+ |
tssop |
5000 |
原装正品,假一罚十 |
|||
HY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
HY |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
HY |
24+ |
NA/ |
3304 |
原装现货,当天可交货,原型号开票 |
HY57V561620BT-SI芯片相关品牌
HY57V561620BT-SI规格书下载地址
HY57V561620BT-SI参数引脚图相关
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HY57V561620BT-SI数据表相关新闻
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2019-2-25
DdatasheetPDF页码索引
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