位置：首页 > IC中文资料第10793页 > HY57V561620BT-I
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620BT-I | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620BT-I产品属性
- 类型
描述
- 型号
HY57V561620BT-I
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
24+ |
NA/ |
3304 |
原装现货,当天可交货,原型号开票 |
|||
TI |
23+ |
SOP |
6500 |
全新原装假一赔十 |
|||
HYNIX/海力士 |
24+ |
TSOP |
20000 |
不忘初芯-只做原装正品 |
|||
HY |
20+ |
TSSOP56 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
HYNIX |
0928+ |
TSOP54 |
17 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
hy |
25+ |
tssop |
18000 |
原厂直接发货进口原装 |
|||
HY |
TSOP54 |
630 |
正品原装--自家现货-实单可谈 |
||||
HY |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
HYNIX |
25+ |
TSOP54 |
15 |
主营内存芯片 全新原装正品 |
|||
HYNIX/海力士 |
22+ |
BGA |
5660 |
现货,原厂原装假一罚十! |
HY57V561620BT-I芯片相关品牌
HY57V561620BT-I规格书下载地址
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HY57V561620BT-I数据表相关新闻
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2019-2-25
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