位置：首页 > IC中文资料第10793页 > HY57V561620BT-I
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620BT-I | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620BT-I产品属性
- 类型
描述
- 型号
HY57V561620BT-I
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX/海力士 |
22+ |
BGA |
5660 |
现货,原厂原装假一罚十! |
|||
hy |
23+ |
tssop |
5000 |
原装正品,假一罚十 |
|||
HYNIX |
18+ |
TSOP-54 |
85600 |
保证进口原装可开17%增值税发票 |
|||
HY |
23+ |
TSSOP56 |
9990 |
原装正品，支持实单 |
|||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
||||
HY |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HYNIX |
新年份 |
TSOP-54 |
3500 |
绝对全新原装现货,欢迎来电查询 |
|||
HYUNDAI |
24+ |
TSOP |
8 |
||||
HY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
HYNIX |
0928+ |
TSOP54 |
17 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
HY57V561620BT-I芯片相关品牌
HY57V561620BT-I规格书下载地址
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HY57V561620BT-I数据表相关新闻
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2019-2-25
DdatasheetPDF页码索引
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