PNP EPITAXIAL PLANAR TRANSISTOR

Description The HM64 is a darlington amplifier transistor designed for applications requiring extremely high current gain. Features • High D.C current gain • HM64 is complementary to HM14

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

PNP EPITAXIAL PLANAR TRANSISTOR

the silicon N-channel Enhanced VDMOSFETs

Description HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization

N-Channel Enhancement Mode Power MOSFET

Description The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID = 5.5A RDS(ON)

P-Channel Enhancement Mode Power MOSFET

Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON)

20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

Micropower Low Profile Surface Mount Inductors

Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C

32M Synchronous Late Write Fast Static RAM (1-Mword 횞 36-bit)

Description The HM64YGB36100 is a synchronous fast static RAM organized as 1-Mword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high d

32M Synchronous Late Write Fast Static RAM (1-Mword 횞 36-bit)

Description The HM64YGB36100 is a synchronous fast static RAM organized as 1-Mword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high d

16M Synchronous Late Write Fast Static RAM (512-kword 횞 36-bit)

Description The HM64YLB36512 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high

16M Synchronous Late Write Fast Static RAM (512-kword 횞 36-bit)

Description The HM64YLB36512 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high

16M Synchronous Late Write Fast Static RAM (512-kword 횞 36-bit)

Description The HM64YLB36512 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high

16M Synchronous Late Write Fast Static RAM (512-kword 횞 36-bit, Register-Latch Mode)

Description The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high

16M Synchronous Late Write Fast Static RAM (512-kword 횞 36-bit, Register-Latch Mode)

Description The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high

N沟道 低压MOS

N沟道 低压MOS

32M Synchronous Late Write Fast Static RAM (1-Mword 횞 36-bit)

文件：209.71 Kbytes Page：21 Pages

32M Synchronous Late Write Fast Static RAM (1-Mword 횞 36-bit)

文件：232.91 Kbytes Page：23 Pages

32M Synchronous Late Write Fast Static RAM (1-Mword 횞 36-bit)

文件：209.71 Kbytes Page：21 Pages

16M Synchronous Late Write Fast Static RAM (512-kword 횞 36-bit)

文件：395.8 Kbytes Page：33 Pages

16M Synchronous Late Write Fast Static RAM (512-kword 횞 36-bit, Register-Latch Mode)

文件：218.9 Kbytes Page：24 Pages