thesiliconN-channelEnhancedVDMOSFETs

Description HM640,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancetheavalancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturization

N-ChannelEnhancementModePowerMOSFET

Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON)

P-ChannelEnhancementModePowerMOSFET

Description TheHM6409usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features ●VDS=-20V,ID=-5.0A RDS(ON)

20VP-ChannelEnhancement-ModeMOSFET

VDS=-20V RDS(ON),Vgs@-1.8V,Ids@-2.0A=73mΩ RDS(ON),Vgs@-2.5V,Ids@-4.0A=54mΩ RDS(ON),Vgs@-4.5V,Ids@-5.5A=43mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance PackageDimensions

QuartzStability

文件：141.46 Kbytes Page：3 Pages

3M??Scotch짰TransparentFilmTape640

文件：567.23 Kbytes Page：6 Pages

MINIATUREFUSEHOLDERS

文件：113.57 Kbytes Page：1 Pages

PULSETRANSFORMERS

文件：155.55 Kbytes Page：1 Pages

PULSETRANSFORMERS

文件：155.55 Kbytes Page：1 Pages