the silicon N-channel Enhanced VDMOSFETs

Description HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization

高压MOS

N-Channel Enhancement Mode Power MOSFET

Description The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID = 5.5A RDS(ON)

P-Channel Enhancement Mode Power MOSFET

Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON)

20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

N沟道 低压MOS

P沟道 低压MOS

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

Quartz Stability

文件：141.46 Kbytes Page：3 Pages

3M??Scotch짰 Transparent Film Tape 640

文件：567.23 Kbytes Page：6 Pages

MINIATURE FUSEHOLDERS

文件：113.57 Kbytes Page：1 Pages

PULSE TRANSFORMERS

文件：155.55 Kbytes Page：1 Pages