丝印代码：6409；P-Channel Enhancement Mode Power MOSFET

Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON)

P沟道 低压MOS

20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

CMOS Manchester Encoder-Decoder

Description The HD-6409 Manchester Encoder-Decoder (MED) is a high speed, low power device manufactured using self-aligned silicon gate technology. The device is intended for use in serial data communication, and can be operated in either of two modes. In the converter mode, the MED converts No

CMOS Manchester Encoder-Decoder

Description The HD-6409 Manchester Encoder-Decoder (MED) is a high speed, low power device manufactured using self-aligned silicon gate technology. The device is intended for use in serial data communication, and can be operated in either of two modes. In the converter mode, the MED converts No

Unijunction Transistor

Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 2µA Max Low Emitter Reverse Current: 200nA Max Passivated Surface for Reliability & Uniformity Absolute Maximum Ra

RF POWER TRANSISTOR NPN SILICON

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3 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

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