位置：首页 > IC中文资料第3549页 > HGTP20N60A4
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP20N60A4 | 600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTP20N60A4 | 600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
HGTP20N60A4 | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 70A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode600V TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60A4DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
600V,SMPSSeriesN-ChannelIGBTs TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
600V,SMPSSeriesN-ChannelIGBTs 文件：908.79 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTP20N60A4产品属性
- 类型
描述
- 型号
HGTP20N60A4
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
FAIRCHILD/仙童 |
21+ |
TO220 |
1709 |
||||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHI |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
FAIRCHILD |
TO220 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILDONSEMICONDUCTOR |
23+ |
NA |
25630 |
原装正品 |
|||
FAIRCHILD |
23+ |
TO-220 |
9526 |
||||
FAIRCHILDONSEMICONDUCTOR |
21+ |
NA |
600 |
只做原装,假一罚十 |
|||
FAIRCHID |
11+ |
TO220 |
920 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
HGTP20N60A4芯片相关品牌
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