600V, SMPS Series N-Channel IGBTs

The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar trans

600V, SMPS Series N-Channel IGBTs

The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V, SMPS Series N-Channel IGBTs

IGBT，600V，SMPS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.7V（Max)@IC=20A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Ultrafast tail current shutoff ·Automotive Chargers ·High Voltage Auxiliaries

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar trans

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：157.02 Kbytes Page：9 Pages

600V，SMPS IGBT

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：157.02 Kbytes Page：9 Pages

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

600V, SMPS Series N-Channel IGBTs

文件：908.79 Kbytes Page：8 Pages

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：157.02 Kbytes Page：9 Pages