The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

Features

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125°C

• Low Conduction Loss

• Temperature Compensating SABER™ Model www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards