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HGTG20N60A4中文资料
HGTG20N60A4数据手册规格书PDF详情
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.
Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.intersil.com
HGTG20N60A4产品属性
- 类型
描述
- 型号
HGTG20N60A4
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHIL |
17+ |
TO-247 |
6200 |
100%原装正品现货 |
|||
ON |
21+ |
TO-247 |
4500 |
全新原装公司现货
|
|||
ON |
24+ |
TO-247 |
9000 |
只做原装 假一赔十 |
|||
FAIRCHIL |
24+ |
TO-247 |
6500 |
全新原装现货,欢迎询购!! |
|||
FAIRCHILD/仙童 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
|||
FAIRCHILD/仙童 |
23+ |
TO247 |
15000 |
全新原装现货,假一赔十. |
|||
ON/安森美 |
2410+ |
TO-247 |
12000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
FAIRCHIL |
2025+ |
SOP |
3795 |
全新原装、公司现货热卖 |
|||
仙童 |
06+ |
TO-247 |
6000 |
原装 |
HGTG20N60A4D 价格
参考价格：￥14.9168
HGTG20N60A4 资料下载更多...
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