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HGTP12N60C3价格
参考价格：￥11.3744
型号：HGTP12N60C3D 品牌：FAIRCHILD 备注：这里有HGTP12N60C3多少钱，2024年最近7天走势，今日出价，今日竞价，HGTP12N60C3批发/采购报价，HGTP12N60C3行情走势销售排行榜，HGTP12N60C3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP12N60C3 | 24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTP12N60C3 | 24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
HGTP12N60C3 | 24A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl | HARRIS HARRIS corporation |  | |
HGTP12N60C3 | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 24A 104W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 24A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso | HARRIS HARRIS corporation | | | |
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
HGTP12N60C3产品属性
- 类型
描述
- 型号
HGTP12N60C3
- 功能描述
IGBT 晶体管 24a 600V N-Ch IGBT UFS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
FSC/仙童 |
2224+ |
TO-220 |
17495 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
HARRIS/哈里斯 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
HARIS |
23+ |
TO-220 |
2500 |
专做原装正品,假一罚百! |
|||
HGTP12N60C3 |
540 |
540 |
|||||
HARIS |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
FAIRCHILD/仙童 |
21+ROHS |
TO-TO-220 |
28300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FSC/仙童 |
21+ |
TO-220 |
71 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
HGTP12N60C3芯片相关品牌
HGTP12N60C3规格书下载地址
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- HGL34G
- HGL34D
- HGL34B
- HGL34A
- HGL341M
- HGL341K
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