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HGTG30N60B3价格
参考价格：￥13.5954
型号：HGTG30N60B3 品牌：FAIRCHILD 备注：这里有HGTG30N60B3多少钱，2025年最近7天走势，今日出价，今日竞价，HGTG30N60B3批发/采购报价，HGTG30N60B3行情走势销售排行榜，HGTG30N60B3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | Fairchild 仙童半导体 |   | |
HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | Intersil | | |
HGTG30N60B3 | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 208W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT | RENESAS 瑞萨 | | |
HGTG30N60B3 | IGBT，600V，PT | ONSEMI 安森美半导体 | | |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate | Intersil | | ||
60A, 600V, UFS Series N-Channel IGBT 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bip | Fairchild 仙童半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：228.05 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | RENESAS 瑞萨 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：228.05 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | Fairchild 仙童半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：228.05 Kbytes Page：8 Pages | Fairchild 仙童半导体 | |
HGTG30N60B3产品属性
- 类型
描述
- 型号
HGTG30N60B3
- 功能描述
IGBT 晶体管 600V N-Channel IGBT UFS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
23+ |
晶体管-UGBT/MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
FAIRCHILD/仙童 |
22+ |
TO247 |
12245 |
现货,原厂原装假一罚十! |
|||
FAIRCHILD/仙童 |
24+ |
TO247 |
9600 |
原装现货,优势供应,支持实单! |
|||
Fairchild |
原装 |
12621 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD/仙童 |
24+ |
TO247 |
8950 |
BOM配单专家,发货快,价格低 |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FAIRCHILD/仙童 |
2447 |
TO247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD |
25+23+ |
TO247 |
9151 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
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