位置：首页 > IC中文资料第5685页 > G30N60B3D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60A, 600V, UFS Series N-Channel IGBT\nwith Anti-Parallel Hyperfast DiodeThe HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar • 60A, 600V, TC= 25oC\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150oC\n• Short Circuit Rating\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode; | ONSEMI 安森美半导体 |   | |
G30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：228.05 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | INTERSIL | | ||
60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | FAIRCHILD 仙童半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate | INTERSIL | | ||
60A, 600V, UFS Series N-Channel IGBT 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bip | FAIRCHILD 仙童半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：228.05 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | |
G30N60B3D产品属性
- 类型
描述
- 型号
G30N60B3D
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
23+ |
TO247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
WESTCODE |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
罗兰/FERRAZ |
23+ |
module |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD |
24+ |
SOT-5102&NBS |
6700 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
哈理斯 |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TELIT |
25+ |
18 |
公司优势库存 热卖中! |
||||
CSR |
25+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
TAOGLAS |
2450+ |
SOP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
FSC |
22+ |
TO-247 |
20000 |
公司只做原装 品质保障 |
|||
MACOM |
23+ |
NA |
25000 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
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2019-10-12
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