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HGTG30N60B3D价格
参考价格：￥26.3897
型号：HGTG30N60B3D 品牌：Fairchild 备注：这里有HGTG30N60B3D多少钱，2026年最近7天走势，今日出价，今日竞价，HGTG30N60B3D批发/采购报价，HGTG30N60B3D行情走势销售排行榜，HGTG30N60B3D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bip | FAIRCHILD 仙童半导体 |   | |
HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate | INTERSIL | | |
HGTG30N60B3D | 600V，PT IGBT HGTG30N60B3D 是一个 MOS 门极高电压开关器件，组合了 MOSFET 和双极晶体管的最佳特性。此器件具有 MOSFET 的高输入阻抗，以及双极晶体管的低导通状态损耗。低得多的导通状态电压降在 25°C 和 150°C 之间仅存在少量变化。使用的 IGBT 是开发型 TA49170。与 IGBT 防并联使用的二极管是开发型 TA49053。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如： 交流和直流电机控制、电磁阀电源和驱动器、继电器和接触器。之前还发型号为 TA49172。 •60A, 600V, TC = 25°C\n•600 V 开关 SOA 能力\n•典型下降时间： TJ=150°C 时为 90 ns\n•短路额定值\n•低导通损耗\n•超快反向并联二极管; | ONSEMI 安森美半导体 | | |
HGTG30N60B3D | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | RENESAS 瑞萨 | | |
HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：228.05 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：228.05 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | INTERSIL | | ||
60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | FAIRCHILD 仙童半导体 | |
HGTG30N60B3D产品属性
- 类型
描述
- 型号
HGTG30N60B3D
- 功能描述
IGBT 晶体管 600V IGBT UFS N-Channel
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-247-3 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
TO-247-3 |
22360 |
样件支持,可原厂排单订货! |
|||
FCS |
20+ |
TO-2473L |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FSC |
16+ |
TO-247-3 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC |
25+ |
TO-3P |
66880 |
原装正品，欢迎询价 |
|||
FAIRCHILD |
24+ |
TO-247 |
3026 |
全新原装环保 |
|||
FAIRCHILD |
24+ |
TO-3P |
3200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ON/安森美 |
19+ |
10000 |
原装现货支持BOM配单服务 |
||||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON |
25+ |
TO-247 |
330 |
原厂原装,价格优势 |
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