30A, 1200V N-Channel IGBT

Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS FET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varie

75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

75A, 1200V, NPT Series N-Channel IGBT

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

1200V, 30A Trench IGBT

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1200V, 30A Trench IGBT

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Discrete IGBT (High-Speed V series) 1200V / 30A

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