HGTG20N60B价格

参考价格:¥14.6723

型号:HGTG20N60B3 品牌:Fairchild 备注:这里有HGTG20N60B多少钱,2024年最近7天走势,今日出价,今日竞价,HGTG20N60B批发/采购报价,HGTG20N60B行情走势销售排行榜,HGTG20N60B报价。
型号 功能描述 生产厂家&企业 LOGO 操作

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 600V 40A 165W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IGBT 600V 40A 165W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

20A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

IXYS

FastSwitching

文件:95.42 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel650-V(D-S)SuperJunctionMOSFET

文件:1.15549 Mbytes Page:11 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

20A600VN-channelenhancedfieldeffecttransistor

文件:833.85 Kbytes Page:6 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

HGTG20N60B产品属性

  • 类型

    描述

  • 型号

    HGTG20N60B

  • 功能描述

    IGBT 晶体管 600V N-Channel IGBT UFS Series

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-6-17 22:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
23+
NA
20000
全新原装假一赔十
FSC
2020+
TO247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
INTERSIL
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
FSC
2018+
TO-3P
11256
只做进口原装正品!假一赔十!
Fairchild
22+
NA
552
加我QQ或微信咨询更多详细信息,
ON/安森美
21+
TO-247-3
8080
公司只做原装,诚信经营
FSC
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
Freescale(飞思卡尔)
2022+
60000
原厂原装,假一罚十
FSC
23+
原厂原封
450
订货1周 原装正品
FAIRCHILD
23+
TO-247
9526

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