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HGTG20N60B3价格
参考价格：￥14.6723
型号：HGTG20N60B3 品牌：Fairchild 备注：这里有HGTG20N60B3多少钱，2025年最近7天走势，今日出价，今日竞价，HGTG20N60B3批发/采购报价，HGTG20N60B3行情走势销售排行榜，HGTG20N60B3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG20N60B3 | 40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTG20N60B3 | 40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor | Intersil Intersil Corporation |  | |
HGTG20N60B3 | 40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG20N60B3 | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 40A 165W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | Intersil Intersil Corporation | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 600V 40A 165W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG20N60B3产品属性
- 类型
描述
- 型号
HGTG20N60B3
- 功能描述
IGBT 晶体管 600V N-Channel IGBT UFS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FSC |
2016+ |
TO-3P |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FSC |
24+ |
TO247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FSC |
20+ |
TO-247 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ON |
TO247 |
5 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ON/安森美 |
19+ |
475 |
原装现货支持BOM配单服务 |
||||
FAIRCHILD/仙童 |
2223+ |
TO-3P |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
FAIRCHILD |
23+ |
TO-247 |
9526 |
||||
FAIRC |
23+ |
TO-247 |
7300 |
专注配单,只做原装进口现货 |
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HGTG20N60B3规格书下载地址
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