HGTG20N60A4D价格

参考价格:¥14.9168

型号:HGTG20N60A4D 品牌:FAIRCHILD 备注:这里有HGTG20N60A4D多少钱,2025年最近7天走势,今日出价,今日竞价,HGTG20N60A4D批发/采购报价,HGTG20N60A4D行情走势销售排行榜,HGTG20N60A4D报价。
型号 功能描述 生产厂家 企业 LOGO 操作
HGTG20N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar trans

Fairchild

仙童半导体

HGTG20N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

Intersil

HGTG20N60A4D

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

ONSEMI

安森美半导体

HGTG20N60A4D

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.7V(Max)@IC=20A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Ultrafast tail current shutoff ·Automotive Chargers ·High Voltage Auxiliaries

ISC

无锡固电

HGTG20N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:157.02 Kbytes Page:9 Pages

Fairchild

仙童半导体

HGTG20N60A4D

600V,SMPS IGBT

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBTs

The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va

Intersil

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

Intersil

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:157.02 Kbytes Page:9 Pages

Fairchild

仙童半导体

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBTs

文件:908.79 Kbytes Page:8 Pages

Fairchild

仙童半导体

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:157.02 Kbytes Page:9 Pages

Fairchild

仙童半导体

HGTG20N60A4D产品属性

  • 类型

    描述

  • 型号

    HGTG20N60A4D

  • 功能描述

    IGBT 晶体管 600V

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-11-22 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
1280
优势代理渠道,原装正品,可全系列订货开增值税票
FAIRCHILD
15
TO-247
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
21+
TO-247-3
8080
只做原装,质量保证
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
21+
TO-247
4500
全新原装公司现货
仙童
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
ON/安森美
24+
TO-247-3
30000
原装正品公司现货,假一赔十!
FAIRCHILD/仙童
2450+
NA
8850
只做原装正品假一赔十为客户做到零风险!!
FAIRCHIL
25+
SOP
3000
全新原装、诚信经营、公司现货销售
Freescale(飞思卡尔)
24+
6000
全新原厂原装正品现货,低价出售,实单可谈

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