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HGTG18N120BN价格
参考价格：￥23.2872
型号：HGTG18N120BND 品牌：FAIRCHILD 备注：这里有HGTG18N120BN多少钱，2025年最近7天走势，今日出价，今日竞价，HGTG18N120BN批发/采购报价，HGTG18N120BN行情走势销售排行榜，HGTG18N120BN报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG18N120BN | 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
HGTG18N120BN | 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi | Intersil | | |
HGTG18N120BN | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 54A 390W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi | Intersil | | ||
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 54A 390W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | |
HGTG18N120BN产品属性
- 类型
描述
- 型号
HGTG18N120BN
- 功能描述
IGBT 晶体管 54A 1200V N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2021+ |
TO247 |
9450 |
原装现货。 |
|||
FAIRCHILD/仙童 |
22+ |
TO247 |
12245 |
现货,原厂原装假一罚十! |
|||
FCS |
20+ |
TO-2473L |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
24+ |
HSSOP36 |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
2023+ |
TO247 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD/仙童 |
24+ |
TO247 |
300 |
原厂授权代理 价格绝对优势 |
|||
FAIRCHILD |
23+ |
TO-247 |
9526 |
||||
FAIRC |
2023+ |
TO-247 |
50000 |
原装现货 |
|||
FAIRC |
23+ |
TO-247 |
7300 |
专注配单,只做原装进口现货 |
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