HGTG18N120BND价格

参考价格:¥23.2872

型号:HGTG18N120BND 品牌:FAIRCHILD 备注:这里有HGTG18N120BND多少钱,2025年最近7天走势,今日出价,今日竞价,HGTG18N120BND批发/采购报价,HGTG18N120BND行情走势销售排行榜,HGTG18N120BND报价。
型号 功能描述 生产厂家&企业 LOGO 操作
HGTG18N120BND

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG18N120BND

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi

Intersil

HGTG18N120BND

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 54A 390W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

54A, 1200V, NPT Series N-Channel IGBT

The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

54A, 1200V, NPT Series N-Channel IGBT

The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi

Intersil

HGTG18N120BND产品属性

  • 类型

    描述

  • 型号

    HGTG18N120BND

  • 功能描述

    IGBT 晶体管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-17 13:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
TO-247-3
10000
十年沉淀唯有原装
FAIRCHILD
23+
TO-247
9526
FAIRCHI
25+
TO-247
12588
原装正品,自己库存 假一罚十
三年内
1983
只做原装正品
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
FAIRCHILD
1922+
TO-247
8200
莱克讯原厂货源每一片都来自原厂原装现货薄利多
FAIRCHILD/仙童
2318+
TO247
4852
十年专业专注 优势渠道商正品保证公司现货
FAIRCHILD/仙童
23+
TO-247
50000
全新原装正品现货,支持订货
Fairchild/ON
22+
TO247
9000
原厂渠道,现货配单
FAIRCHILD
22+
TO-247
5000
全新原装现货!自家库存!

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