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HGTG18N120BND价格
参考价格：￥23.2872
型号：HGTG18N120BND 品牌：FAIRCHILD 备注：这里有HGTG18N120BND多少钱，2024年最近7天走势，今日出价，今日竞价，HGTG18N120BND批发/采购报价，HGTG18N120BND行情走势销售排行榜，HGTG18N120BND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG18N120BND | 54A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG18N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTG18N120BND | 54A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG18N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
HGTG18N120BND | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 54A 390W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
54A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG18N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
54A,1200V,NPTSeriesN-ChannelIGBT TheHGTG18N120BNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
54A,1200V,NPTSeriesN-ChannelIGBT TheHGTG18N120BNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
HGTG18N120BND产品属性
- 类型
描述
- 型号
HGTG18N120BND
- 功能描述
IGBT 晶体管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHI |
2020+ |
TO-3P |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FSC |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHIL |
23+ |
TO-247 |
2000 |
全新原装现货 |
|||
FSC |
22+ |
CAN |
500000 |
行业低价,代理渠道 |
|||
ON/安森美 |
21+ |
TO-247-3 |
13880 |
公司只售原装,支持实单 |
|||
ON/安森美 |
23+ |
TO-247-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
INTERSIL |
2020+ |
TO-247 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON/安森美 |
22+ |
SMD |
9000 |
原装正品 |
|||
ON/安森美 |
21+ |
TO-247-3 |
8080 |
只做原装,质量保证 |
|||
INF |
2020+ |
TO-3P |
350000 |
100%进口原装正品公司现货库存 |
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