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HGTG18N120BND价格
参考价格：￥23.2872
型号：HGTG18N120BND 品牌：FAIRCHILD 备注：这里有HGTG18N120BND多少钱，2026年最近7天走势，今日出价，今日竞价，HGTG18N120BND批发/采购报价，HGTG18N120BND行情走势销售排行榜，HGTG18N120BND报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG18N120BND | 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi | FAIRCHILD 仙童半导体 |   | |
HGTG18N120BND | 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi | INTERSIL | | |
HGTG18N120BND | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 54A 390W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
HGTG18N120BND | 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | RENESAS 瑞萨 | | |
HGTG18N120BND | IGBT，1200V，NPT | ONSEMI 安森美半导体 | | |
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi | FAIRCHILD 仙童半导体 | | ||
54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi | FAIRCHILD 仙童半导体 | | ||
54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi | INTERSIL | |
HGTG18N120BND产品属性
- 类型
描述
- 型号
HGTG18N120BND
- 功能描述
IGBT 晶体管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi(安森美) |
25+ |
TO-247-3 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON/安森美 |
21+ |
TO-247-3 |
8080 |
只做原装,质量保证 |
|||
FAIRCHILD |
22+ |
TO-247 |
5000 |
全新原装现货!自家库存! |
|||
FAIRCHILD |
19+ |
120 |
|||||
FSC |
17+ |
TO-247 |
6200 |
||||
ON/安森美 |
23+ |
TO-247-3 |
8080 |
正规渠道,只有原装! |
|||
FAIRCHI |
18+ |
TO247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
三年内 |
1983 |
只做原装正品 |
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