HGTG18N120BND价格

参考价格:¥23.2872

型号:HGTG18N120BND 品牌:FAIRCHILD 备注:这里有HGTG18N120BND多少钱,2026年最近7天走势,今日出价,今日竞价,HGTG18N120BND批发/采购报价,HGTG18N120BND行情走势销售排行榜,HGTG18N120BND报价。
型号 功能描述 生产厂家 企业 LOGO 操作
HGTG18N120BND

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi

FAIRCHILD

仙童半导体

HGTG18N120BND

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi

INTERSIL

HGTG18N120BND

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 54A 390W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

HGTG18N120BND

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

RENESAS

瑞萨

HGTG18N120BND

IGBT,1200V,NPT

ONSEMI

安森美半导体

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bi

FAIRCHILD

仙童半导体

54A, 1200V, NPT Series N-Channel IGBT

The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi

FAIRCHILD

仙童半导体

54A, 1200V, NPT Series N-Channel IGBT

The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi

INTERSIL

HGTG18N120BND产品属性

  • 类型

    描述

  • 型号

    HGTG18N120BND

  • 功能描述

    IGBT 晶体管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-2-21 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
22+
TO-247
5000
全新原装现货!自家库存!
三年内
1983
只做原装正品
仙童
06+
TO-247
1000
原装
INTERSIL
25+
TO-247
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
FSC
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
FAIRCHILD/仙童
24+
TO247
60000
FAIRCHILD/仙童
2318+
TO247
4852
十年专业专注 优势渠道商正品保证公司现货
FAIRCHILD
26+
TO-247
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税

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