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HGT1S10N120BNST价格
参考价格：￥9.0744
型号：HGT1S10N120BNST 品牌：Fairchild 备注：这里有HGT1S10N120BNST多少钱，2025年最近7天走势，今日出价，今日竞价，HGT1S10N120BNST批发/采购报价，HGT1S10N120BNST行情走势销售排行榜，HGT1S10N120BNST报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S10N120BNST | 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Fairchild 仙童半导体 |   | |
35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Fairchild 仙童半导体 | | ||
N-Channel IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.7V（Max）@IC= 10A · Short Circuit Rating · Low Conduction Loss APPLICATIONS · AC and DC motor controls · Power supplies and drivers | ISC 无锡固电 | | ||
35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Fairchild 仙童半导体 | | ||
35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | |
HGT1S10N120BNST产品属性
- 类型
描述
- 型号
HGT1S10N120BNST
- 功能描述
IGBT 晶体管 N-Channel IGBT NPT Series 1200V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO263 |
20648 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
FAIRCHILDONSEMICONDUCTOR |
24+ |
NA |
20000 |
原装现货,专业配单专家 |
|||
ONSEMI/安森美 |
25+ |
TO-263 |
32360 |
ONSEMI/安森美全新特价HGT1S10N120BNST即刻询购立享优惠#长期有货 |
|||
FSC |
16+ |
SOT263 |
104 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON/安森美 |
24+ |
TO-263AB-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON(安森美) |
2526+ |
TO-263AB-3 |
3000 |
全新、原装 |
|||
FSC |
25+ |
SOT263 |
30000 |
代理全新原装现货,价格优势 |
|||
ON/安森美 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
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HGT1S10N120BNST数据表相关新闻
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2020-11-25HGDESM021A
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2020-11-13HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
2020-1-13
DdatasheetPDF页码索引
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