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HGT1S10N120BNS价格
参考价格：￥0.0000
型号：HGT1S10N120BNS 品牌：FAIRCHILD 备注：这里有HGT1S10N120BNS多少钱，2025年最近7天走势，今日出价，今日竞价，HGT1S10N120BNS批发/采购报价，HGT1S10N120BNS行情走势销售排行榜，HGT1S10N120BNS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | |
HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGT1S10N120BNS | N-Channel IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.7V（Max）@IC= 10A · Short Circuit Rating · Low Conduction Loss APPLICATIONS · AC and DC motor controls · Power supplies and drivers | ISC 无锡固电 | | |
35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
HGT1S10N120BNS产品属性
- 类型
描述
- 型号
HGT1S10N120BNS
- 功能描述
IGBT 晶体管 35A 1200V NPT N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
25+23+ |
TO263 |
36872 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
ONSEMI |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
ON/安森美 |
24+ |
TO-263 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON/安森美 |
24+ |
TO-263 |
265000 |
全新原装现货特价销售,欢迎来电查询 |
|||
2017+ |
TO-263 |
28562 |
只做原装正品假一赔十! |
||||
ON/安森美 |
24+ |
TO263 |
20648 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
23+ |
TO-263AB-3 |
9451 |
公司只做原装正品,假一赔十 |
|||
Fairchild/ON |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
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2020-11-25HGDESM021A
https://hch01.114ic.com/
2020-11-13HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
2020-1-13
DdatasheetPDF页码索引
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