Dual En hance ment Mode MOSFET

Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

Dual enhancement mode MOSFET

•6 pad surface mount package\n• VDS = 90V\n• RDS(on) \n• ID(on) N-Channel = 1.5A | P-Channel = 1.1A\n• Two devices selected for VDS ID(on) and RDS(on) similarity\n• Full TX processing available\n• Gold plated contacts;

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

Dual En hance ment Mode MOSFET

Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on

Dual En hance ment Mode MOSFET

Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on

Dual enhancement mode MOSFET

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat