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型号 功能描述 生产厂家 企业 LOGO 操作
HCT802TXV

Dual En hance ment Mode MOSFET

Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on

OPTEK

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

MOTOROLA

摩托罗拉

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

MOTOROLA

摩托罗拉

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

MOSPEC

统懋

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

HCT802TXV产品属性

  • 类型

    描述

  • 型号

    HCT802TXV

  • 功能描述

    MOSFET DUAL ENHANCE HERMETIC SMD

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2026-8-3 14:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
SOIC
65480
PHI
24+
SOP14
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST/意法
23+
SOP
5200
原厂原装
恩XP
20+
SSOP
20500
汽车电子原装主营-可开原型号增税票
ON.SEMI
00/01+
SOP-14
190
全新原装100真实现货供应
TOSHIBA
22+
SOP39
8000
原装正品支持实单
10+
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
25+
SOP
575
百分百原装正品 真实公司现货库存 本公司只做原装 可
原厂
22+
N/A
20000
只做原装
TI/德州仪器
1326+PBF
SOP-14
100
全新、原装

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