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型号 功能描述 生产厂家 企业 LOGO 操作
HAT1035R

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting

RENESAS

瑞萨

HAT1035R

Silicon P Channel Power MOSFET High Speed Power Switching

RENESAS

瑞萨

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting

RENESAS

瑞萨

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

HAT1035R产品属性

  • 类型

    描述

  • 型号

    HAT1035R

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel Power MOSFET High Speed Power Switching

更新时间:2026-8-1 14:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LEM
25+23+
Sensors
35256
绝对原装正品全新进口深圳现货
MINI-CIRCUITS
2545+
SMD
4560
只做原装正品假一赔十为客户做到零风险!!
MINI-CIRCUITS
2318+
原装正品
4285
十年专业专注 优势渠道商正品保证
MINI-CIRCUITS
24+
con
10000
查现货到京北通宇商城
MINI
23+
N/A
10000
原装现货 假一赔十
RENESAS/瑞萨
24+
SOIC-8
9600
原装现货,优势供应,支持实单!
MINI
24+
SMD
3600
MINI专营品牌全新原装正品假一赔十
MINI-CIRCUITS
23+
nlu
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MINI
三年内
1983
只做原装正品
26+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择

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