位置：首页 > IC中文资料第5443页 > H9926
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit | HSMC 华昕 |   | ||
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit | HSMC 华昕 | | ||
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit | HSMC 华昕 | | ||
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit | HSMC 华昕 | | ||
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) | HSMC 华昕 | | ||
Low Voltage MOSFET | HSMC 华昕 | | ||
Low Voltage MOSFET | HSMC 华昕 | | ||
Power switching application Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply | GOFORD 谷峰半导体 | | ||
Dual N-Channel MOSFET Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. | TUOFENG 拓锋半导体 | | ||
Dual N-Channel 20-V (D-S) MOSFET 文件：996.47 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
6A竊?0V Dual N-CHANNEL MOSFET 文件：124.3 Kbytes Page：4 Pages | KIA 可易亚半导体 | | ||
Dual N-Channel 2.5V Specified PowerTrench MOSFET 文件：117.54 Kbytes Page：5 Pages | Fairchild 仙童半导体 | |
H9926产品属性
- 类型
描述
- 型号
H9926
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
Dual N-Channel Enhancement-Mode MOSFET(20V, 6A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HSM |
25+23+ |
TSSOP |
42529 |
绝对原装正品全新进口深圳现货 |
|||
HSM |
25+ |
TSSOP |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
台湾华昕 |
TSOP-8 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FSC |
NEW |
SO-8/2.5K |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HSMC |
2019+ |
TSSOP8 |
36000 |
原盒原包装 可BOM配套 |
|||
HSMC |
25+ |
TSSOP8 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HSMC |
22+ |
TSSOP-8 |
20000 |
公司只做原装 品质保障 |
|||
HSMC |
2025+ |
TSSOP8 |
3827 |
全新原厂原装产品、公司现货销售 |
|||
华昕 |
23+ |
TSSOP |
54868 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
H9926芯片相关品牌
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2019-8-23
DdatasheetPDF页码索引
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