Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Features • 6.5 A, 20 V. RDS(ON)= 0.030 Ω@ VGS= 4.5 V

双 N 沟道，2.5V 指定，PowerTrench™ MOSFET，20V，6.5A，30mΩ

此类N沟道2.5V规格MOSFET采用飞兆半导体先进PowerTrench工艺生产。 它已针对广泛栅极驱动电压(2.5V – 10V)的电源管理应用进行了优化。 •6.5 A, 20 V\n•RDS(ON) = 30 mΩ @ VGS = 4.5 V\n•RDS(ON) = 43 mΩ @ VGS = 2.5 V\n•针对电池保护电路中的使用优化。\n•±10 VGSS允许更宽的工作电压范围\n•低栅极电荷;

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.82 Kbytes Page：5 Pages

Dual N-Channel 20-V (D-S) MOSFET

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N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applications • Power Manageme

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package.

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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