Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 7A, RDS(ON) = 25mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

Dual N-Channel Enhancement Mode MOSFET

Feature ● 20V/6A, RDS(ON) = 33mΩ(MAX) @VGS = 4.5V. RDS(ON) = 50mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package. Applications ● LI-ION Protection Circuit

N Channel MOSFET

Dual N-Channel 20-V (D-S) MOSFET

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 40mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

Dual N-Channel Enhancement Mode Field Effect Transistor

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N Channel MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

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Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

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6A竊?0V Dual N-CHANNEL MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

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