Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

Features

• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A

• High Density Cell Design for Ultra Low On-Resistance

• High Power and Current Handing Capability

• Fully Characterized Avalanche Voltage and Current

• Ideal for Li ion Battery Pack Applications

Applications

• Battery Protection

• Load Switch

• Power Management